• Production of NO in nitrogen-based active screen plasma nitriding devices, a disadvantage or an opportunity?.
  T. Czerwiec, O. Carrivain, M. Masieiro, R. Hugon, C. Cardinaud, T. Belmonte, C. Noël, R P. Cardoso and G. Marcos.
  Surf. Coat. Technol. 2025, 500, 131896

• Mass spectrometry and in situ x-ray photoelectron spectroscopy investigations of organometallic species induced by the etching of germanium, antimony and selenium in a methane-based plasma.
  T Meyer, A. Girard, M Bouška, E. Baudet, M. Baillieul, P. Nemec, V. Nazabal and C. Cardinaud.
  Plasma Sources Sci. Technol. 2023, 32, 085003
• On the low temperature limits for cryogenic etching: A quasi in situ XPS study.
  Felipe Cemin, Aurelie Girard and Christophe Cardinaud.
  Appl. Surf. Sci. 2023, 637, 157941

• Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O-2 and Ar plasmas.
  G. Antoun, T. Tillocher, A. Girard, P. Lefaucheux, J. Faguet, H. Kim, D. Zhang, M. Wang, K. Maekawa, C. Cardinaud and R. Dussart.
  Journal of Vacuum Science & Technology A 2022, 40
• Quasi In Situ XPS on a SiOxFy Layer Deposited on Silicon by a Cryogenic Process.
  G. Antoun, A. Girard, T. Tillocher, P. Lefaucheux, J. Faguet, K. Maekawa, C. Cardinaud and R. Dussart.
  ECS J. Solid State Sci. Technol. 2022, 11, 013013
• Combined analysis methods for investigating titanium and nickel surface contamination after plasma deep etching.
  Rim Ettouri, Thomas Tillocher, Philippe Lefaucheux, Bertrand Boutaud, Vincent Fernandez, Neal Fairley, Christophe Cardinaud, Aurelie Girard and Rémi Dussart.
  Surf. Interface Anal. 2022, 54, 134

• Etching of iron and iron-chromium alloys using ICP-RIE chlorine plasma.
  Guillaume Le Dain, Feriel Laourine, Stephane Guilet, Thierry Czerwiec, Grégory Marcos, Cédric Noel, Gérard Henrion, Christophe Cardinaud, Aurelie Girard and Ahmed Rhallabi.
  Plasma Sources Science and Technology 2021, 30, 095022
• Towards a reliable assessment of charging effects during surface analysis: Accurate spectral shapes of ZrO2 and Pd/ZrO2 via X-ray Photoelectron Spectroscopy.
  Pascal Bargiela, Vincent Fernandez, Christophe Cardinaud, John Walton, Mark Greiner, David Morgan, Neal Fairley and Jonas Baltrusaitis.
  Appl. Surf. Sci. 2021, 566, 150728
• Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6 /Ar plasmas.
  T Meyer, A. Girard, G LeDain, A. Rhallabi, E. Baudet, V. Nazabal, P. Nemec and C. Cardinaud.
  Appl. Surf. Sci. 2021, 549, 149192

• Investigation of organic precursors and plasma mixtures allowing control of carbon passivation when etching HgCdTe in hydrocarbon-based inductively coupled plasmas.
  Jordan Piet, Wilfrid Faider, Aurelie Girard, François Boulard and Christophe Cardinaud.
  Journal of Vacuum Science & Technology A 2020, 38, 053005
• Etching of GeSe2 chalcogenide glass and its pulsed laser deposited thin films in SF6, SF6/Ar and SF6/O-2 plasmas.
  T Meyer, G LeDain, A. Girard, A. Rhallabi, M Bouška, P. Nemec, V. Nazabal and C. Cardinaud.
  Plasma Sources Sci. Technol. 2020, 29, 105006

• New CH4-N-2 dry etch chemistry for poly(methyl methacrylate) removal without consuming polystyrene for lamellar copolymers application.
  Aurelien Sarrazin, Nicolas Posseme, Patricia Pimenta-Barros, Sebastien Barnola, Raluca Tiron and Christophe Cardinaud.
  J. Vac. Sci. Technol. B 2019, 37, 030601
• Wide band gap kesterite absorbers for thin film solar cells: potential and challenges for their deployment in tandem devices.
  Bart Vermang, Guy Brammertz, Marc Meuris, T. Schnabel, E. Ahlswede, Leo Choubrac, Sylvie Harel, Christophe Cardinaud, Ludovic Arzel, Nicolas Barreau, Joop van Deelen, Pieter-Jan Bolt and Patrice Bras.
  Sustainable Energy & Fuels 2019, 3, 2246-2259
• Modeling of C4F8 inductively coupled plasmas: effects of high RF power on the plasma electrical properties.
  Guillaume Le Dain, Ahmed Rhallabi, Aurelie Girard, Christophe Cardinaud, Fabrice Roqueta and Mohamed Boufnichel.
  Plasma Sources Science & Technology 2019, 28, 085002
• The role of physisorption in the cryogenic etching process of silicon.
  G. Antoun, R. Dussart, T. Tillocher, P. Lefaucheux, C. Cardinaud, A. Girard, S. Tahara, K. Yamazaki, K. Yatsuda, J. Faguet and K. Maekawa.
  Japanese Journal of Applied Physics 2019, 58, SEEB03

• Fluorine-based plasmas: Main features and application in micro-and nanotechnology and in surface treatment.
  Christophe Cardinaud.
  C.R. Chim. 2018, 21, 723-739
• Block copolymer selectivity: A new dry etch approach for cylindrical applications.
  Aurelien Sarrazin, Nicolas Posseme, Patricia Pimenta-Barros, Sebastien Barnola, Ahmed Gharbi, Maxime Argoud, Raluca Tiron and Christophe Cardinaud.
  Journal of Vacuum Science & Technology B 2018, 36, 041803
• Modeling of silicon etching using Bosch process: Effects of oxygen addition on the plasma and surface properties.
  Guillaume Le Dain, Ahmed Rhallabi, Christophe Cardinaud, Aurelie Girard, Marie-Claude Fernandez, Mohamed Boufnichel and Fabrice Roqueta.
  Journal of Vacuum Science & Technology A 2018, 36, 03E109
• X-ray photoelectron spectroscopy analysis of Ge-Sb-Se pulsed laser deposited thin films.
  Emeline Baudet, Christophe Cardinaud, Remi Boidin, Aurelie Girard, Jan Gutwirth, Petr Nemec and Virginie Nazabal.
  J. Am. Ceram. Soc. 2018, 101, 3347-3356
• Covalent functionalization of polycrystalline silicon nanoribbons applied to Pb(II) electrical detection.
  Brice Le Borgne, Aurelie Girard, Christophe Cardinaud, Anne-Claire Salaun, Laurent Pichon and Florence Geneste.
  Sens. Actuators, B 2018, 268, 368-375

• Tailoring the chemistry and the nano-architecture of organic thin films using cold plasma processes.
  Damien Thiry, Adrien Chauvin, Abdel-Aziz El Mel, Christophe Cardinaud, Jonathan Hamon, Eric Gautron, Nicolas Stephant, Agnes Granier and Pierre-Yves Tessier.
  Plasma Processes Polym. 2017, 14, e1700042
• Experimental design approach for deposition optimization of RF sputtered chalcogenide thin films devoted to environmental optical sensors.
  E. Baudet, M. Sergent, P. Nemec, C. Cardinaud, E. Rinnert, K. Michel, L. Jouany, B. Bureau and V. Nazabal.
  Scientific Reports 2017, 7, 3500

• PMMA removal selectivity to polystyrene using dry etch approach.
  Aurelien Sarrazin, Nicolas Posseme, Patricia Pimenta-Barros, Sebastien Barnola, Ahmed Gharbi, Maxime Argoud, Raluca Tiron and Christophe Cardinaud.
  J. Vac. Sci. Technol. B 2016, 34, 061802
• PMMA removal selectivity to PS using dry etch approach: Sub-10nm patterning application.
  A. Sarrazin, N. Posseme, Pimenta P. Barros, S. Barnola, G. Claveau, A. Gharbi, M. Argoud, G. Chamiot-Maitral, R. Tiron, C. Nicolet, C. Navarro, C. Cardinaud, Q. Lin and S U. Engelmann.
  Advanced {Etch} {Technology} for {Nanopatterning} {V} 2016, 444, UNSP 97820G
• Structural analysis of RF sputtered Ge-Sb-Se thin films by Raman and X-ray photoelectron spectroscopies.
  E. Baudet, C. Cardinaud, A. Girard, E. Rinnert, K. Michel, B. Bureau and V. Nazabal.
  J. Non-Cryst. Solids 2016, 444, 64-72

Référence n° 2318 :


Aurelien Sarrazin, Patricia Pimenta-Barros, Nicolas Posseme, Sebastien Barnola, Ahmed Gharbi, Maxime Argoud, Raluca Tiron and Christophe Cardinaud.
2015, 33

• Surface chemistry of InP ridge structures etched in Cl-2-based plasma analyzed with angular XPS.
  Sophie Bouchoule, Romain Chanson, Arnaud Pageau, Edmond Cambril, Stephane Guilet, Ahmed Rhallabi and Christophe Cardinaud.
  J. Vac. Sci. Technol. A 2015, 33, 05E124

• X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl-2-based inductively coupled plasma.
  Romain Chanson, Sophie Bouchoule, Christophe Cardinaud, Camille Petit-Etienne, Edmond Cambril, Ahmed Rhallabi, Stephane Guilet and Elisabeth Blanquet.
  J. Vac. Sci. Technol. B 2014, 32, 011219
• Quantitative Auger Electron Spectroscopic Analysis of Hg1-x Cd (x) Te.
  A. Gaucher, E. Martinez, J. Baylet and C. Cardinaud.
  J. Electron. Mater. 2014, 43, 1255-1262
• Quantitative Auger Electron Spectroscopy Analysis of Hg1-x Cd (x) Te (vol 43, pg 1255, 2014).
  A. Gaucher, E. Martinez, J. Baylet and C. Cardinaud.
  J. Electron. Mater. 2014, 43, 2770-2770
• Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts.
  A. Girard, N. Coulon, C. Cardinaud, T. Mohammed-Brahim and F. Geneste.
  Appl. Surf. Sci. 2014, 314, 358-366

• Plasma Etching of Poly(dimethylsiloxane): Roughness Formation, Mechanism, Control, and Application in the Fabrication of Microfluidic Structures.
  Maria-Elena Vlachopoulou, George Kokkoris, Christophe Cardinaud, Evangelos Gogolides and Angeliki Tserepi.
  Plasma Process. Polym. 2013, 10, 29-40
• Modeling of inductively coupled plasma Ar/Cl-2/N-2 plasma discharge: Effect of N-2 on the plasma properties.
  Romain Chanson, Ahmed Rhallabi, Marie Claude Fernandez, Christophe Cardinaud and Jean Pierre Landesman.
  J. Vac. Sci. Technol. A 2013, 31, 011301
• Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution.
  Romain Chanson, Ahmed Rhallabi, Marie Claude Fernandez and Christophe Cardinaud.
  Plasma Process. Polym. 2013, 10, 213-224
• SiGe derivatization by spontaneous reduction of aryl diazonium salts.
  A. Girard, F. Geneste, N. Coulon, C. Cardinaud and T. Mohammed-Brahim.
  Appl. Surf. Sci. 2013, 282, 146-155
• H atom surface loss kinetics in pulsed inductively coupled plasmas.
  S. Jacq, C. Cardinaud, L. Le Brizoual and A. Granier.
  Plasma Sources Sci. Technol. 2013, 22, 055004
• Characterization of Plasma Etching Process Damage in HgCdTe.
  A. Gaucher, J. Baylet, J. Rothman, E. Martinez and C. Cardinaud.
  J. Electron. Mater. 2013, 42, 3006-3014
• RF sputtered amorphous chalcogenide thin films for surface enhanced infrared absorption spectroscopy.
  F. Verger, V. Nazabal, F. Colas, P. Nemec, C. Cardinaud, E. Baudet, R. Chahal, E. Rinnert, K. Boukerma, I. Peron, S. Deputier, M. Guilloux-Viry, J P. Guin, H. Lhermite, A. Moreac, C. Compere and B. Bureau.
  Opt. Mater. Express 2013, 3, 2112-2131

• Global Model of Cl-2/Ar High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP.
  R. Chanson, A. Rhallabi, M C. Fernandez, C. Cardinaud, S. Bouchoule, L. Gatilova and A. Talneau.
  IEEE Trans. Plasma Sci. 2012, 40, 959-971
• Effect of Cl-2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy.
  S. Bouchoule, L. Vallier, G. Patriarche, T. Chevolleau and C. Cardinaud.
  J. Vac. Sci. Technol. A 2012, 30, 031301
• Ion energy distributions measured inside a high-voltage cathode in a BF3 pulsed dc plasma used for plasma doping: experiments and ab initio calculations.
  Ludovic Godet, Svetlana Radovanov, Jay Sheuer, Christophe Cardinaud, Nicolas Fernandez, Yves Ferro and Gilles Cartry.
  Plasma Sources Sci. Technol. 2012, 21, 065006

• Atomic scale study of InP etching by Cl-2-Ar ICP plasma discharge.
  A. Rhallabi, R. Chanson, J -P. Landesman, C. Cardinaud and M -C. Fernandez.
  Eur. Phys. J.-Appl. Phys 2011, 53, 33606
• Modelling of fluorine based high density plasma for the etching of silica glasses.
  Ludovic Lallement, Ahmed Rhallabi, Christophe Cardinaud and Marie Claude Peignon Fernandez.
  J. Vac. Sci. Technol. A 2011, 29, 051304

• Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication.
  L. Lallement, C. Gosse, C. Cardinaud, M -C. Peignon-Fernandez and A. Rhallabi.
  J. Vac. Sci. Technol. A 2010, 28, 277-286
• Roughening of porous SiCOH materials in fluorocarbon plasmas.
  F. Bailly, T. David, T. Chevolleau, M. Darnon, N. Posseme, R. Bouyssou, J. Ducote, O. Joubert and C. Cardinaud.
  J. Appl. Phys. 2010, 108, 014906
• Influence of Cadmium Composition on CH4-H-2-Based Inductively Coupled Plasma Etching of Hg1-x Cd (x) Te.
  F. Boulard, J. Baylet and C. Cardinaud.
  J. Electron. Mater. 2010, 39, 1256-1261
• HiPIMS Ion Energy Distribution Measurements in Reactive Mode.
  Pierre-Yves Jouan, Laurent Le Brizoual, Mihai Ganciu, Christophe Cardinaud, Sylvain Tricot and Mohamed-Abdou Djouadi.
  IEEE Trans. Plasma Sci. 2010, 38, 3089-3094

• In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O-2 cryoetching process.
  J. Pereira, L E. Pichon, R. Dussart, C. Cardinaud, C Y. Duluard, E H. Oubensaid, P. Lefaucheux, M. Boufnichel and P. Ranson.
  Appl. Phys. Lett. 2009, 94, 071501
• Effect of Ar and N-2 addition on CH4-H-2 based chemistry inductively coupled plasma etching of HgCdTe.
  F. Boulard, J. Baylet and C. Cardinaud.
  J. Vac. Sci. Technol. A 2009, 27, 855-861
• Mechanisms of Oxygen Plasma Nanotexturing of Organic Polymer Surfaces: From Stable Super Hydrophilic to Super Hydrophobic Surfaces.
  K. Tsougeni, N. Vourdas, A. Tserepi, E. Gogolides and C. Cardinaud.
  Langmuir 2009, 25, 11748-11759

• Electrical properties and interfacial characteristics of RuO2/HfAlOx/SiON/Si and RuO2/LaAlO3/SiON/Si capacitors.
  V. Edon, Z. Li, M -C. Hugon, C. Krug, K P. Bastos, L. Miotti, I J R. Baumvol, C. Cardinaud, O. Durand and C. Eypert.
  J. Electrochem. Soc. 2008, 155, H661-H668
• Investigation of lanthanum and hafnium-based dielectric films by X-ray reflectivity, spectroscopic ellipsometry and X-ray photoelectron spectroscopy.
  V. Edon, M -C. Hugon, B. Agius, O. Durand, C. Eypert and C. Cardinaud.
  Thin Solid Films 2008, 516, 7974-7978

• Biofluid transport on hydrophobic plasma-deposited fluorocarbon films.
  P. Bayiati, A. Tserepi, P S. Petrou, K. Misiakos, S E. Kakabakos, E. Gogolides and C. Cardinaud.
  Microelectron. Eng. 2007, 84, 1677-1680
• High density fluorocarbon plasma etching of methylsilsesquioxane SiOC(H) low-k material and SiC(H) etch stop layer: surface analyses and investigation of etch mechanisms.
  D. Eon, V. Raballand, G. Cartry and C. Cardinaud.
  J. Phys. D-Appl. Phys. 2007, 40, 3951-3959
• Porous SiOCH, SiCH and SiO2 etching in high density fluorocarbon plasma with a pulsed bias.
  Vanessa Raballand, Gilles Cartry and Christophe Cardinaud.
  Plasma Process. Polym. 2007, 4, 563-573
• A model for Si, SiCH, SiO2, SiOCH, and porous SiOCH etch rate calculation in inductively coupled fluorocarbon plasma with a pulsed bias: Importance of the fluorocarbon layer.
  V. Raballand, G. Cartry and C. Cardinaud.
  J. Appl. Phys. 2007, 102, 063306
• Impact of the Cu-based substrates and catalyst deposition techniques on carbon nanotube growth at low temperature by PECVD.
  M. Dubosc, S. Casimirius, M -P. Besland, C. Cardinaud, A. Granier, J -L. Duvail, A. Gohier, T. Minea, V. Arnal and J. Torres.
  Microelectron. Eng. 2007, 84, 2501-2505
• First developments for photonics integrated on plasma-polymer-HMDSO: Single-mode TE00-TM00 straight waveguides.
  T. Begou, B. Beche, A. Goullet, J P. Landesman, A. Granier, C. Cardinaud, E. Gaviot, L. Camberlein, N. Grossard, G. Jezequel and J. Zyss.
  Opt. Mater. 2007, 30, 657-661

• Photonics integrated circuits on plasma-polymer-HMDSO, Single-mode TE(00)-TM(00) straight waveguides, S-bends, Y-junctions and mach-zehnder interferometers.
  T. Begou, B. Becheb, A. Goullet, A. Granier, C. Cardinaud, E. Gaviot, V. Raballand, J P. Landesman and J. Zyss.
  Iecon 2006 - 32nd {Annual} {Conference} on {Ieee} {Industrial} {Electronics}, {Vols} 1-11 2006, 9, 850-854

Référence n° 2078 :


B. Liu, J -P. Landesman, J -L. Leclercq, A. Rhallabi, M. Avella, M A. Gonzalez, J. Jimenez, S. Guilet, C. Cardinaud and F. Pommereau.
2006, 9

• InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides.
  B. Liu, J -P. Landesman, J -L. Leclercq, A. Rhallabi, C. Cardinaud, S. Guilet, F. Pommereau, M. Avella, M A. Gonzalez and J. Jimenez.
  Mater. Sci. Semicond. Process 2006, 9, 225-229
• Etching mechanisms of Si and SiO2 in fluorocarbon ICP plasmas, analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy.
  F. Gaboriau, G. Cartry, M C. Peignon and C. Cardinaud.
  J. Phys. D-Appl. Phys. 2006, 39, 1830-1845
• Plasma doping implant depth profile calculation based on ion energy distribution measurements.
  L. Godet, Z. Fang, S. Radovanov, S. Walther, E. Arevalo, F. Lallement, J T. Scheuer, T. Miller, D. Lenoble, G. Cartry and C. Cardinaud.
  J. Vac. Sci. Technol. B 2006, 24, 2391-2397
• Low temperature plasma carbon nanotubes growth on patterned catalyst.
  M. Dubosc, T. Minea, M P. Besland, C. Cardinaud, A. Granier, A. Gohier, S. Point and J. Torres.
  Microelectron. Eng. 2006, 83, 2427-2431
• Plasma oxidation of polyhedral oligomeric silsesquioxane polymers.
  D. Eon, V. Raballand, G. Cartry, C. Cardinaud, N. Vourdas, P. Argitis and E. Gogolides.
  J. Vac. Sci. Technol. B 2006, 24, 2678-2688