• Mass spectrometry and in situ x-ray photoelectron spectroscopy investigations of organometallic species induced by the etching of germanium, antimony and selenium in a methane-based plasma.
  T Meyer, A. Girard, M Bouška, E. Baudet, M. Baillieul, P. Nemec, V. Nazabal and C. Cardinaud.
  Plasma Sources Sci. Technol. 2023, 32, 085003
• On the low temperature limits for cryogenic etching: A quasi in situ XPS study.
  Felipe Cemin, Aurelie Girard and Christophe Cardinaud.
  Appl. Surf. Sci. 2023, 637, 157941

• Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O-2 and Ar plasmas.
  G. Antoun, T. Tillocher, A. Girard, P. Lefaucheux, J. Faguet, H. Kim, D. Zhang, M. Wang, K. Maekawa, C. Cardinaud and R. Dussart.
  Journal of Vacuum Science & Technology A 2022, 40
• Quasi In Situ XPS on a SiOxFy Layer Deposited on Silicon by a Cryogenic Process.
  G. Antoun, A. Girard, T. Tillocher, P. Lefaucheux, J. Faguet, K. Maekawa, C. Cardinaud and R. Dussart.
  ECS J. Solid State Sci. Technol. 2022, 11, 013013
• Combined analysis methods for investigating titanium and nickel surface contamination after plasma deep etching.
  Rim Ettouri, Thomas Tillocher, Philippe Lefaucheux, Bertrand Boutaud, Vincent Fernandez, Neal Fairley, Christophe Cardinaud, Aurelie Girard and Rémi Dussart.
  Surf. Interface Anal. 2022, 54, 134

• Etching of iron and iron-chromium alloys using ICP-RIE chlorine plasma.
  Guillaume Le Dain, Feriel Laourine, Stephane Guilet, Thierry Czerwiec, Grégory Marcos, Cédric Noel, Gérard Henrion, Christophe Cardinaud, Aurelie Girard and Ahmed Rhallabi.
  Plasma Sources Science and Technology 2021, 30, 095022
• Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6 /Ar plasmas.
  T Meyer, A. Girard, G LeDain, A. Rhallabi, E. Baudet, V. Nazabal, P. Nemec and C. Cardinaud.
  Appl. Surf. Sci. 2021, 549, 149192

• Investigation of organic precursors and plasma mixtures allowing control of carbon passivation when etching HgCdTe in hydrocarbon-based inductively coupled plasmas.
  Jordan Piet, Wilfrid Faider, Aurelie Girard, François Boulard and Christophe Cardinaud.
  Journal of Vacuum Science & Technology A 2020, 38, 053005
• Etching of GeSe2 chalcogenide glass and its pulsed laser deposited thin films in SF6, SF6/Ar and SF6/O-2 plasmas.
  T Meyer, G LeDain, A. Girard, A. Rhallabi, M Bouška, P. Nemec, V. Nazabal and C. Cardinaud.
  Plasma Sources Sci. Technol. 2020, 29, 105006

• Modeling of C4F8 inductively coupled plasmas: effects of high RF power on the plasma electrical properties.
  Guillaume Le Dain, Ahmed Rhallabi, Aurelie Girard, Christophe Cardinaud, Fabrice Roqueta and Mohamed Boufnichel.
  Plasma Sources Science & Technology 2019, 28, 085002
• The role of physisorption in the cryogenic etching process of silicon.
  G. Antoun, R. Dussart, T. Tillocher, P. Lefaucheux, C. Cardinaud, A. Girard, S. Tahara, K. Yamazaki, K. Yatsuda, J. Faguet and K. Maekawa.
  Japanese Journal of Applied Physics 2019, 58, SEEB03

• Modeling of silicon etching using Bosch process: Effects of oxygen addition on the plasma and surface properties.
  Guillaume Le Dain, Ahmed Rhallabi, Christophe Cardinaud, Aurelie Girard, Marie-Claude Fernandez, Mohamed Boufnichel and Fabrice Roqueta.
  Journal of Vacuum Science & Technology A 2018, 36, 03E109
• X-ray photoelectron spectroscopy analysis of Ge-Sb-Se pulsed laser deposited thin films.
  Emeline Baudet, Christophe Cardinaud, Remi Boidin, Aurelie Girard, Jan Gutwirth, Petr Nemec and Virginie Nazabal.
  J. Am. Ceram. Soc. 2018, 101, 3347-3356
• Covalent functionalization of polycrystalline silicon nanoribbons applied to Pb(II) electrical detection.
  Brice Le Borgne, Aurelie Girard, Christophe Cardinaud, Anne-Claire Salaun, Laurent Pichon and Florence Geneste.
  Sens. Actuators, B 2018, 268, 368-375
• A General Approach Based on Sampled-Current Voltammetry for Minimizing Electrode Fouling in Electroanalytical Detection.
  Isabelle Mazerie, Pierre Didier, Florence Razan, Philippe Hapiot, Nathalie Coulon, Aurelie Girard, Olivier de Sagazan, Didier Floner and Florence Geneste.
  ChemElectroChem 2018, 5, 144-152

• Structural analysis of RF sputtered Ge-Sb-Se thin films by Raman and X-ray photoelectron spectroscopies.
  E. Baudet, C. Cardinaud, A. Girard, E. Rinnert, K. Michel, B. Bureau and V. Nazabal.
  J. Non-Cryst. Solids 2016, 444, 64-72

• Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts.
  A. Girard, N. Coulon, C. Cardinaud, T. Mohammed-Brahim and F. Geneste.
  Appl. Surf. Sci. 2014, 314, 358-366

• SiGe derivatization by spontaneous reduction of aryl diazonium salts.
  A. Girard, F. Geneste, N. Coulon, C. Cardinaud and T. Mohammed-Brahim.
  Appl. Surf. Sci. 2013, 282, 146-155