74 références
Année 2024
- Propagation of insulator-to-metal transition driven by photoinduced strain waves in a {Mott} material.
Tatsuya Amano, Danylo Babich, Ritwika Mandal, Julio Guzman-Brambila, Alix Volte, Elzbieta Trzop, Marina Servol, Ernest Pastor, Maryam Alashoor, Jörgen Larsson, Andrius Jurgilaitis, Van-Thai Pham, David Kroon, John Carl Ekström, Byungnam Ahn, Celine Mariette, Matteo Levantino, Mikhail Kozhaev, Julien Tranchant, Benoit Corraze, Laurent Cario, Mohammad Dolatabadi, Vinh Ta Phuoc, Rodolphe Sopracase, Mathieu Guillon, Hirotake Itoh, Yohei Kawakami, Yuto Nakamura, Hideo Kishida, Hervé Cailleau, Nat. Phys. 2024, 1-8
- Microscopic evidences for intercalation of nickel and iron into layered oxysulfide La2O2S2.
Shunsuke Sasaki, Dalel Driss, Maria Teresa Caldes, Eric Gautron, Sylvian Cadars, Etienne Janod, Benoit Corraze, Catherine Guillot-Deudon, Isabelle Braems, Stephane Jobic and Laurent Cario. Solid State Sci. 2024, 147, 107383
Année 2023
- Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (Cr1-xVx)2O3.
Michael Rodriguez-Fano, Mohamad Haydoura, Julien Tranchant, Etienne Janod, Benoit Corraze, Pierre-Yves Jouan, Laurent Cario and Marie-Paule Besland. ACS Appl. Mater. Interfaces 2023, 15, 54611-54621
- Synthesis of Non-centrosymmetric, Metastable Rare-Earth Oxysulfides by Anionic Redox Topochemistry.
Louis-Beni Mvele, Shunsuke Sasaki, Philippe Deniard, Yoshihiro Tsujimoto, Etienne Janod, Catherine Guillot-Deudon, Maria Teresa Caldes, Isabelle Braems, Benoit Corraze, Stephane Jobic and Laurent Cario. Chem. Mater. 2023, 35, 7597-7604
- Revisiting the Crystal Structure of Layered Oxychalcogenides Ln2O2S2 (Ln = La, Pr, and Nd).
Louis-Beni Mvele, Shunsuke Sasaki, Camille Latouche, Philippe Deniard, Etienne Janod, Isabelle Braems, Stephane Jobic and Laurent Cario. Inorg. Chem. 2023, 62, 7264-7272
- Ultrafast photo-induced dynamics of V2O3 thin films under hydrostatic pressure.
Gaël Privault, Guénolé Huitric, Marius Hervé, Elzbieta Trzop, Julien Tranchant, Benoit Corraze, Zohra Khaldi, Laurent Cario, Etienne Janod, Jean-Claude Ameline, Nicolas Godin and Roman Bertoni. Eur. Phys. J. Spec. Top. 2023, 232, 2195-2203
Année 2022
- Symmetry-Resolved Study of Lattice Vibration and Libration Modes in [Fe(phen)(2)(NCS)(2)] Crystal.
Gaël Privault, Jean-Yves Mevellec, Maciej Lorenc, Bernard Humbert, Etienne Janod, Nathalie Daro, Guillaume Chastanet, Alaska Subedi and Eric Collet. Cryst. Growth Des. 2022, 22, 5100-5109
- Impact of the terahertz and optical pump penetration depths on generated strain waves temporal profiles in a V2O3 thin film.
Guénolé Huitric, Michael Rodriguez-Fano, Lucas Gournay, Nicolas Godin, Marius Hervé, Gaël Privault, Julien Tranchant, Zohra Khaldi, Marco Cammarata, Eric Collet, Etienne Janod and Christophe Odin. Faraday Discuss. 2022, 237, 389-405
- Shifting photo-stationary light-induced excited spin state trapping equilibrium towards higher temperature by increasing light fluence.
Lucas Gournay, Ievgeniia Chaban, Jean-Yves Mevellec, Bernard Humbert, Etienne Janod, Laurent Guerin, Marco Cammarata, Nathalie Daro, Guillaume Chastanet and Eric Collet. Chem. Phys. Lett. 2022, 791, 139395
- Artificial Electro-Optical Neuron Integrating Hot Electrons in a Mott Insulator.
Danylo Babich, Laurent Cario, Benoit Corraze, Maciej Lorenc, Julien Tranchant, Roman Bertoni, Marco Cammarata, Hervé Cailleau and Etienne Janod. Phys. Rev. Applied 2022, 17, 014040
Année 2021
- Probing and Mapping the Dynamics of Metal/Insulator Nanodomains Switching in V2O3 by Cryo-Spectromicroscopy Techniques.
Ibrahim Koita, Xiaoyan Li, Luiz H G. Tizei, Jean-Denis Blazit, Nathalie Brun, Julien Tranchant, Benoit Corraze, Laurent Cario, Etienne Janod, Marcel Tencé, Odile Stephan and Laura Bocher. Microscopy and Microanalysis 2021, 27, 67-68
- Mapping metal/insulator nanodomains switching in V2O3 by variable-temperature electron spectromicroscopy investigations.
Ibrahim Koita, Xiaoyan Li, Luiz H G. Tizei, Jean-Denis Blazit, Nathalie Brun, Etienne Janod, Julien Tranchant, Benoit Corraze, Laurent Cario, Marcel Tencé, Odile Stephan and Laura Bocher. Microscopy and Microanalysis 2021, 27, 1482-1485
- Photoinduced charge density wave phase in 1T-TaS2: growth and coarsening mechanisms.
Amélie Jarnac, Vincent L R. Jacques, Laurent Cario, Etienne Janod, Steven L. Johnson, Sylvain Ravy and Claire Laulhe. Comptes Rendus. Physique 2021, 22, 139-160
- Solvothermal and mechanochemical intercalation of Cu into La2O2S2 enabled by the redox reactivity of (S2)2− pairs.
Shunsuke Sasaki, Gwladys Steciuk, Catherine Guillot-Deudon, Maria Teresa Caldes, Isabelle Braems, Etienne Janod, Benoit Corraze, Stephane Jobic and Laurent Cario. Dalton Trans. 2021, 50, 12419-12423
- Design of metastable oxychalcogenide phases by topochemical (de)intercalation of sulfur in La2O2S2.
Shunsuke Sasaki, Maria Teresa Caldes, Catherine Guillot-Deudon, Isabelle Braems, Gwladys Steciuk, Lukáš Palatinus, Eric Gautron, Gilles Frapper, Etienne Janod, Benoit Corraze, Stephane Jobic and Laurent Cario. Nat Commun 2021, 12, 3605
- Strain wave pathway to semiconductor-to-metal transition revealed by time-resolved {X}-ray powder diffraction.
C. Mariette, M. Lorenc, H. Cailleau, E. Collet, L. Guérin, A. Volte, E. Trzop, R. Bertoni, X. Dong, B. Lépine, O. Hernandez, E. Janod, L. Cario, V. Ta Phuoc, S. Ohkoshi, H. Tokoro, L. Patthey, A. Babic, I. Usov, D. Ozerov, L. Sala, S. Ebner, P. Böhler, A. Keller, A. Oggenfuss, T. Zmofing, S. Redford, S. Vetter, R. Follath, P. Juranic, Nat. Commun. 2021, 12, 1239
- J(eff)=3/2 metallic phase and unconventional superconductivity in GaTa4Se8.
Min Yong Jeong, Seo Hyoung Chang, Hyeong Jun Lee, Jae-Hoon Sim, Kyeong Jun Lee, Etienne Janod, Laurent Cario, Ayman Said, Wenli Bi, Philipp Werner, Ara Go, Jungho Kim and Myung Joon Han. Phys. Rev. B 2021, 103, L081112
Année 2020
- Control of stoichiometry and morphology in polycrystalline V(2)O(3)thin films using oxygen buffers.
Jonathan A J. Rupp, Benoit Corraze, Marie-Paule Besland, Laurent Cario, Julien Tranchant, Dirk J. Wouters, Rainer Waser and Etienne Janod. J. Mater. Sci. 2020, 55, 14717-14727
- Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode.
J A J. Rupp, E. Janod, M -P. Besland, B. Corraze, A. Kindsmüller, M. Querre, J. Tranchant, L. Cario, R. Dittmann, R. Waser and D J. Wouters. Thin Solid Films 2020, 705, 138063
Année 2019
- Unexplored reactivity of (S-n)(2-) oligomers with transition metals in low-temperature solid-state reactions.
Shunsuke Sasaki, Melanie Lesault, Elodie Grange, Etienne Janod, Benoit Corraze, Sylvian Cadars, Maria Teresa Caldes, Catherine Guillot-Deudon, Stephane Jobic and Laurent Cario. Chem. Commun. 2019, 55, 6189-6192
Année 2018
- First demonstration of "Leaky Integrate and Fire" artificial neuron behavior on (V0.95Cr0.05)(2)O-3 thin film.
Coline Adda, Laurent Cario, Julien Trenchant, Etienne Janod, Marie-Paula Besiand, Marcelo Rozenberg, Pablo Stoliar and Benoit Corraze. MRS Commun. 2018, 8, 835-841
- Relaxation of a Spiking Mott Artificial Neuron.
Federico Tesler, Coline Adda, Julien Tranchant, Benoit Corraze, Etienne Janod, Laurent Cario, Pablo Stoliar and Marcelo Rozenberg. Phys. Rev. Appl. 2018, 10, 054001
- Mott insulators: A large class of materials for Leaky Integrate and Fire (LIF) artificial neuron.
Coline Adda, Benoit Corraze, Pablo Stoliar, Pascale Diener, Julien Tranchant, Agathe Filatre-Furcate, Marc Fourmigue, Dominique Lorcy, Marie-Paule Besland, Etienne Janod and Laurent Cario. J. Appl. Phys. 2018, 124, 152124
- A Topochemical Approach to Synthesize Layered Materials Based on the Redox Reactivity of Anionic Chalcogen Dimers.
Shunsuke Sasaki, Dalel Driss, Elodie Grange, Jean-Yves Mevellec, Maria Teresa Caldes, Catherine Guillot-Deudon, Sylvian Cadars, Benoit Corraze, Etienne Janod, Stephane Jobic and Laurent Cario. Angewandte Chemie-International Edition 2018, 57, 13618-13623
- How a dc Electric Field Drives Mott Insulators Out of Equilibrium.
P. Diener, E. Janod, B. Corraze, M. Querre, C. Adda, M. Guilloux-Viry, S. Cordier, A. Camjayi, M. Rozenberg, M P. Besland and L. Cario. Phys. Rev. Lett. 2018, 121, 016601
- Non-volatile resistive switching in the Mott insulator (V1-xCrx)(2)O-3.
M. Querre, J. Tranchant, B. Corraze, S. Cordier, V. Bouquet, S. Deputier, M. Guilloux-Viry, M -P. Besland, E. Janod and L. Cario. Physica B-Condensed Matter 2018, 536, 327-330
- Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films.
Jonathan A J. Rupp, Madec Querre, Andreas Kindsmueller, Marie-Paule Besland, Etienne Janod, Regina Dittmann, Rainer Waser and Dirk J. Wouters. J. Appl. Phys. 2018, 123, 044502
Année 2017
- A flavoprotein supports cell wall properties in the necrotrophic fungus Alternaria brassicicola.
Sandrine Pigné, Agata Zykwinska, Etienne Janod, Stephane Cuenot, Mohammed Kerkoud, Roxane Raulo, Nelly Bataillé-Simoneau, Muriel Marchi, Anthony Kwasiborski, Guillaume N’Guyen, Guillaume Mabilleau, Philippe Simoneau and Thomas Guillemette. Fungal Biology and Biotechnology 2017, 4, 1
Control of Resistive Switching in Mott Memories Based on TiN/AM(4)Q(8)/TiN MIM Devices .
J. Tranchant, J. Sandrini, E. Janod, D. Sacchetto, B. Corraze, M -P. Besland, J. Ghanbaja, G. De Micheli, P -E. Gaillardon, L. Cario, S. Shingubara, Z. Karim, B. MagyariKope, H. Shima, H. Kubota, J G. Park, K. Kobayashi, L. Goux, G. Bersuker and Y. Saito. Nonvolatile {Memories} 5 2017, 46, 3-12
- Crystal structure and chemical bonding in the mixed anion compound BaSF.
D. Driss, S. Cadars, P. Deniard, J -Y. Mevellec, B. Corraze, E. Janod and L. Cario. Dalton Trans. 2017, 46, 16244-16250
- An artificial neuron founded on resistive switching of Mott insulators.
Coline Adda, Julien Tranchant, Pablo Stoliar, Benoit Corraze, Etienne Janod, Ralph Gay, Roger Llopis, Marie-Paule Besland, Luis E. Hueso and Laurent Cario. 2017 {Ieee} 9th {International} {Memory} {Workshop} (imw) 2017, 8, 149-152
- Direct experimental observation of the molecular J(eff)=3/2 ground state in the lacunar spinel GaTa4Se8.
Min Yong Jeong, Seo Hyoung Chang, Beom Hyun Kim, Jae-Hoon Sim, Ayman Said, Diego Casa, Thomas Gog, Etienne Janod, Laurent Cario, Seiji Yunoki, Myung Joon Han and Jungho Kim. Nat. Commun. 2017, 8, 782
- Ultrafast Formation of a Charge Density Wave State in 1T-TaS2: Observation at Nanometer Scales Using Time-Resolved X-Ray Diffraction.
C. Laulhe, T. Huber, G. Lantz, A. Ferrer, S O. Mariager, S. Grubel, J. Rittmann, J A. Johnson, V. Esposito, A. Lubcke, L. Huber, M. Kubli, M. Savoini, V L R. Jacques, L. Cario, B. Corraze, E. Janod, G. Ingold, P. Beaud, S L. Johnson and S. Ravy. Phys. Rev. Lett. 2017, 118, 247401
- Combined First-Principles Calculations and Experimental Study of the Phonon Modes in the Multiferroic Compound GeV4S8.
Elena Cannuccia, Vinh Ta Phuoc, Benjamin Briere, Laurent Cario, Etienne Janod, Benoit Corraze and Marie Bernadette Lepetit. J. Phys. Chem. C 2017, 121, 3522-3529
- A Leaky-Integrate-and-Fire Neuron Analog Realized with a Mott Insulator.
Pablo Stoliar, Julien Tranchant, Benoit Corraze, Etienne Janod, Marie-Paule Besland, Federico Tesler, Marcelo Rozenberg and Laurent Cario. Adv. Funct. Mater. 2017, 27, 1604740
Année 2016
- Metal-insulator transitions in (V1-xCrx)(2)O-3 thin films deposited by reactive direct current magnetron co-sputtering.
Madec Querre, Etienne Janod, Laurent Cario, Julien Tranchant, Benoit Corraze, Valérie Bouquet, Stephanie Deputier, Stephane Cordier, Maryline Guilloux-Viry and Marie-Paule Besland. Thin Solid Films 2016, 617, 56-62
- Ba2F2Fe1.5Se3: An Intergrowth Compound Containing Iron Selenide Layers.
Dalel Driss, Etienne Janod, Benoit Corraze, Catherine Guillot-Deudon and Laurent Cario. Inorg. Chem. 2016, 55, 2923-2928
Année 2015
- From resistive switching mechanisms in AM(4)Q(8) Mott insulators to Mott memories.
J. Tranchant, E. Janod, B. Corraze, M -P. Besland and L. Cario. 2015 {Ieee} 7th {International} {Memory} {Workshop} (imw) 2015, 460, 97-100
- Control of resistive switching in AM(4)Q(8) narrow gap Mott insulators: A first step towards neuromorphic applications.
Julien Tranchant, Etienne Janod, Benoit Corraze, Pablo Stoliar, Marcelo Rozenberg, Marie-Paule Besland and Laurent Cario. Phys. Status Solidi A-Appl. Mat. 2015, 212, 239-244
- Resistive Switching Induced by Electric Pulses in a Single-Component Molecular Mott Insulator.
Pablo Stoliar, Pascale Diener, Julien Tranchant, Benoit Corraze, Benjamin Briere, Vinh Ta-Phuoc, Nathalie Bellec, Marc Fourmigue, Dominique Lorcy, Etienne Janod and Laurent Cario. J. Phys. Chem. C 2015, 119, 2983-2988
- X-ray study of femtosecond structural dynamics in the 2D charge density wave compound 1T-TaS2.
C. Laulhe, L. Cario, B. Corraze, E. Janod, T. Huber, G. Lantz, S. Boulfaat, A. Ferrer, S O. Mariager, J A. Johnson, S. Gruebel, A. Luebcke, G. Ingold, P. Beaud, S L. Johnson and S. Ravy. Physica B 2015, 460, 100-104
- Negative Colossal Magnetoresistance Driven by Carrier Type in the Ferromagnetic Mott Insulator GaV4S8.
Etienne Janod, Eugen Dorolti, Benoit Corraze, Vincent Guiot, Sabrina Salmon, Viorel Pop, Frederic Christien and Laurent Cario. Chem. Mat. 2015, 27, 4398-4404
- Resistive Switching in Mott Insulators and Correlated Systems.
Etienne Janod, Julien Tranchant, Benoit Corraze, Madec Querre, Pablo Stoliar, Marcelo Rozenberg, Tristan Cren, Dimitri Roditchev, Vinh Ta Phuoc, Marie-Paule Besland and Laurent Cario. Adv. Funct. Mater. 2015, 25, 6287-6305
- Coherent long-range magnetic bound states in a superconductor.
Gerbold C. Menard, Sebastien Guissart, Christophe Brun, Stephane Pons, Vasily S. Stolyarov, Francois Debontridder, Matthieu V. Leclerc, Etienne Janod, Laurent Cario, Dimitri Roditchev, Pascal Simon and Tristan Cren. Nat. Phys. 2015, 11, 1013-+
Année 2014
- Electric Pulse Induced Resistive Switching in the Narrow Gap Mott Insulator GaMo4S8.
Valérie Bouquet, Laurent Cario, Stephane Cordier, Maryline Guilloux-Viry, Madec Querre, Benoit Corraze, Etienne Janod, Marie Paule Besland, Julien Tranchant and Michel Potel. Inorganic and Environmental Materials 2014, 179, 135-140
- Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications.
J. Tranchant, A. Pellaroque, E. Janod, B. Angleraud, B. Corraze, L. Cario and M -P. Besland. J. Phys. D-Appl. Phys. 2014, 47, 065309
- Nonthermal and purely electronic resistive switching in a Mott memory.
P. Stoliar, M. Rozenberg, E. Janod, B. Corraze, J. Tranchant and L. Cario. Phys. Rev. B 2014, 90, 045146
- First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8.
A. Camjayi, C. Acha, R. Weht, M G. Rodriguez, B. Corraze, E. Janod, L. Cario and M J. Rozenberg. Phys. Rev. Lett. 2014, 113, 086404
- Relation between Thermally Induced Structural Distortions and Electronic Properties of the Layered Misfit Chalcogenide (LaS)(1.196)VS2.
Ta V. Phuoc, V. Brouet, B. Corraze, E. Janod, M. Zaghrioui and L. Cario. J. Phys. Chem. C 2014, 118, 19273-19279
- Orbital-Ordering-Driven Multiferroicity and Magnetoelectric Coupling in GeV4S8.
Kiran Singh, Charles Simon, Elena Cannuccia, Marie-Bernadette Lepetit, Benoit Corraze, Etienne Janod and Laurent Cario. Phys. Rev. Lett. 2014, 113, 137602
Année 2013
- Optical Conductivity Measurements of GaTa4Se8 Under High Pressure: Evidence of a Bandwidth-Controlled Insulator-to-Metal Mott Transition.
Ta V. Phuoc, C. Vaju, B. Corraze, R. Sopracase, A. Perucchi, C. Marini, P. Postorino, M. Chligui, S. Lupi, E. Janod and L. Cario. Phys. Rev. Lett. 2013, 110, 037401
- Ultrafast filling of an electronic pseudogap in an incommensurate crystal.
V. Brouet, J. Mauchain, E. Papalazarou, J. Faure, M. Marsi, P H. Lin, A. Taleb-Ibrahimi, P. Le Fevre, F. Bertran, L. Cario, E. Janod, B. Corraze, Ta V. Phuoc and L. Perfetti. Phys. Rev. B 2013, 87, 041106
- Avalanche breakdown in GaTa4Se8 (-) Te-x(x) narrow-gap Mott insulators.
V. Guiot, L. Cario, E. Janod, B. Corraze, Ta V. Phuoc, M. Rozenberg, P. Stoliar, T. Cren and D. Roditchev. Nat. Commun. 2013, 4, 1722
- Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers.
J. Tranchant, E. Janod, L. Cario, B. Corraze, E. Souchier, J -L. Leclercq, P. Cremillieu, P. Moreau and M -P. Besland. Thin Solid Films 2013, 533, 61-65
- Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application.
E. Souchier, M -P. Besland, J. Tranchant, B. Corraze, P. Moreau, R. Retoux, C. Estournes, P. Mazoyer, L. Cario and E. Janod. Thin Solid Films 2013, 533, 54-60
- Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators.
Pablo Stoliar, Laurent Cario, Etiene Janod, Benoit Corraze, Catherine Guillot-Deudon, Sabrina Salmon-Bourmand, Vincent Guiot, Julien Tranchant and Marcelo Rozenberg. Adv. Mater. 2013, 25, 3222-3226
- Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM(4)Q(8).
B. Corraze, E. Janod, L. Cario, P. Moreau, L. Lajaunie, P. Stoliar, V. Guiot, V. Dubost, J. Tranchant, S. Salmon, M -P. Besland, Ta V. Phuoc, T. Cren, D. Roditchev, N. Stephant, D. Troadec and M. Rozenberg. Eur. Phys. J.-Spec. Top. 2013, 222, 1047-1056
- Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8.
Vincent Dubost, Tristan Cren, Cristian Vaju, Laurent Cario, Benoit Corraze, Etienne Janod, Francois Debontridder and Dimitri Roditchev. Nano Lett. 2013, 13, 3648-3653
Année 2012
Année 2011
- First evidence of resistive switching in polycrystalline GaV4S8 thin layers.
Emeline Souchier, Laurent Cario, Benoit Corraze, Philippe Moreau, Pascale Mazoyer, Claude Estournes, Richard Retoux, Etienne Janod and Marie-Paule Besland. Phys. Status Solidi-Rapid Res. Lett. 2011, 5, 53-55
- Control of the Electronic Properties and Resistive Switching in the New Series of Mott Insulators GaTa4Se8-yTey (0 <= y <= 6.5).
V. Guiot, E. Janod, B. Corraze and L. Cario. Chem. Mat. 2011, 23, 2611-2618
- Orbital anisotropy and low-energy excitations of the quasi-one-dimensional conductor beta-Sr0.17V2O5.
J. Laverock, A R H. Preston, B. Chen, J. McNulty, K E. Smith, L F J. Piper, P -A. Glans, J -H. Guo, C. Marin, E. Janod and Ta V. Phuoc. Phys. Rev. B 2011, 84, 155103
Année 2010
- Half-Metallic Ferromagnetism and Large Negative Magnetoresistance in the New Lacunar Spinel GaTi3VS8.
Eugen Dorolti, Laurent Cario, Benoit Corraze, Etienne Janod, Cristian Vaju, Hyun-Joo Koo, Erjun Kan and Myung-Hwan Whangbo. J. Am. Chem. Soc. 2010, 132, 5704-5710
- Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories.
Laurent Cario, Cristian Vaju, Benoit Corraze, Vincent Guiot and Etienne Janod. Adv. Mater. 2010, 22, 5193-+
Année 2009
- Charge dynamics in quasi-one dimensional beta-Sr1/6V2O5.
Ta V. Phuoc, C. Sellier, B. Corraze, E. Janod and C. Marin. Eur. Phys. J. B 2009, 69, 181-186
- Electric-Field-Assisted Nanostructuring of a Mott Insulator.
Vincent Dubost, Tristan Cren, Cristian Vaju, Laurent Cario, Benoit Corraze, Etienne Janod, Francois Debontridder and Dimitri Roditchev. Adv. Funct. Mater. 2009, 19, 2800-2804
- Incommensurate spin correlation driven by frustration in BiCu2PO6.
O. Mentre, E. Janod, P. Rabu, M. Hennion, F. Leclercq-Hugeux, J. Kang, C. Lee, M -H. Whangbo and S. Petit. Phys. Rev. B 2009, 80, 180413
Année 2008
- Polarized reflectivity of beta-Sr0.17V2O5.
Ta V. Phuoc, C. Sellier, E. Janod and C. Marin. Phys. Rev. B 2008, 77, 075123
- Metal-metal bonding and correlated metallic behavior in the new deficient spinel Ga0.87Ti4S8.
C. Vaju, J. Martial, E. Janod, B. Corraze, V. Fernandez and L. Cario. Chem. Mat. 2008, 20, 2382-2387
- Structure and magnetic properties of oxychalcogenides A(2)F(2)Fe(2)OQ(2) (A = sr, ba; Q = s, se) with Fe2O square planar layers representing an antiferromagnetic checkerboard spin lattice.
Houria Kabbour, Etienne Janod, Benoit Corraze, Michel Danot, Changhoon Lee, Myung-Hwan Whangbo and Laurent Cario. J. Am. Chem. Soc. 2008, 130, 8261-8270
- Electric-pulse-driven electronic phase separation, insulator-metal transition, and possible superconductivity in a Mott insulator.
Cristian Vaju, Laurent Cario, Benoit Corraze, Etienne Janod, Vincent Dubost, Tristan Cren, Dimitri Roditchev, Daniel Braithwaite and Olivier Chauvet. Adv. Mater. 2008, 20, 2760-+
- Electric-pulse-induced resistive switching and possible superconductivity in the Mott insulator GaTa4Se8.
C. Vaju, L. Cario, B. Corraze, E. Janod, V. Dubost, T. Cren, D. Roditchev, D. Braithwaite and O. Chauvet. Microelectron. Eng. 2008, 85, 2430-2433
Année 2006
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