• Modeling of silicon etching using Bosch process: Effects of oxygen addition on the plasma and surface properties.
  Guillaume Le Dain, Ahmed Rhallabi, Christophe Cardinaud, Aurelie Girard, Marie-Claude Fernandez, Mohamed Boufnichel and Fabrice Roqueta.
  Journal of Vacuum Science & Technology A 2018, 36, 03E109

• Multiscale approach for simulation of silicon etching using SF6/C4F8 Bosch process.
  Guillaume Le Dain, Ahmed Rhallabi, Marie Claude Fernandez, Mohamed Boufnichel and Fabrice Roqueta.
  Journal of Vacuum Science & Technology A 2017, 35, 03E113

• Modeling of inductively coupled plasma SF6/O-2/Ar plasma discharge, Effect of O-2 on the plasma kinetic properties.
  Amand Pateau, Ahmed Rhallabi, Marie-Claude Fernandez, Mohamed Boufnichel and Fabrice Roqueta.
  J. Vac. Sci. Technol. A 2014, 32, 021303
• SF6 and C4F8 global kinetic models coupled to sheath models.
  Yehya Haidar, Amand Pateau, Ahmed Rhallabi, Marie Claude Fernandez, Arezki Mokrani, Fadia Taher, Fabrice Roqueta and Mohamed Boufnichel.
  Plasma Sources Sci. Technol. 2014, 23, 065037

• Modeling of inductively coupled plasma Ar/Cl-2/N-2 plasma discharge: Effect of N-2 on the plasma properties.
  Romain Chanson, Ahmed Rhallabi, Marie Claude Fernandez, Christophe Cardinaud and Jean Pierre Landesman.
  J. Vac. Sci. Technol. A 2013, 31, 011301
• Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution.
  Romain Chanson, Ahmed Rhallabi, Marie Claude Fernandez and Christophe Cardinaud.
  Plasma Process. Polym. 2013, 10, 213-224

• Global Model of Cl-2/Ar High-Density Plasma Discharge and 2-D Monte-Carlo Etching Model of InP.
  R. Chanson, A. Rhallabi, M C. Fernandez, C. Cardinaud, S. Bouchoule, L. Gatilova and A. Talneau.
  IEEE Trans. Plasma Sci. 2012, 40, 959-971

• Atomic scale study of InP etching by Cl-2-Ar ICP plasma discharge.
  A. Rhallabi, R. Chanson, J -P. Landesman, C. Cardinaud and M -C. Fernandez.
  Eur. Phys. J.-Appl. Phys 2011, 53, 33606
• Modelling of fluorine based high density plasma for the etching of silica glasses.
  Ludovic Lallement, Ahmed Rhallabi, Christophe Cardinaud and Marie Claude Peignon Fernandez.
  J. Vac. Sci. Technol. A 2011, 29, 051304

• Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication.
  L. Lallement, C. Gosse, C. Cardinaud, M -C. Peignon-Fernandez and A. Rhallabi.
  J. Vac. Sci. Technol. A 2010, 28, 277-286

• Etching mechanisms of Si and SiO2 in fluorocarbon ICP plasmas, analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy.
  F. Gaboriau, G. Cartry, M C. Peignon and C. Cardinaud.
  J. Phys. D-Appl. Phys. 2006, 39, 1830-1845