36 références
Année 2023
Année 2022
Année 2021
- Etching of iron and iron-chromium alloys using ICP-RIE chlorine plasma.
Guillaume Le Dain, Feriel Laourine, Stephane Guilet, Thierry Czerwiec, Grégory Marcos, Cédric Noel, Gérard Henrion, Christophe Cardinaud, Aurelie Girard and Ahmed Rhallabi. Plasma Sources Science and Technology 2021, 30, 095022
- A high-power impulse magnetron sputtering global model for argon plasma-chromium target interactions.
Joelle Zgheib, Pierre Yves Jouan and Ahmed Rhallabi. Journal of Vacuum Science & Technology A 2021, 39, 043004
- Surface composition and micromasking effect during the etching of amorphous Ge-Sb-Se thin films in SF6 and SF6 /Ar plasmas.
T Meyer, A. Girard, G LeDain, A. Rhallabi, E. Baudet, V. Nazabal, P. Nemec and C. Cardinaud. Appl. Surf. Sci. 2021, 549, 149192
Année 2020
Année 2019
- Modeling of C4F8 inductively coupled plasmas: effects of high RF power on the plasma electrical properties.
Guillaume Le Dain, Ahmed Rhallabi, Aurelie Girard, Christophe Cardinaud, Fabrice Roqueta and Mohamed Boufnichel. Plasma Sources Science & Technology 2019, 28, 085002
- Theoretical study of the electronic structure of mono-bromide of lanthanum molecule including spin-orbit coupling effects.
Yaman Hannade, Fadia Taher, Yehya Haidar and Ahmed Rhallabi. J. Mol. Model. 2019, 25, 250
- AlN Etching under ICP Cl-2/BCl3/Ar Plasma Mixture: Experimental Characterization and Plasma Kinetic Model.
Mohammad Rammal, Ahmed Rhallabi, Delphine Neel, Dalila Make, Alexandre Shen and Abdou Djouadi. Mrs Advances 2019, 4, 1579-1587
Année 2018
Année 2017
Année 2016
- Simulation of cryogenic silicon etching under SF6/O-2/Ar plasma discharge.
Yehya Haidar, Ahmed Rhallabi, Amand Pateau, Arezki Mokrani, Fadia Taher, Fabrice Roqueta and Mohamed Boufnichel. J. Vac. Sci. Technol. A 2016, 34, 061306
- Monte Carlo Poration Model of Cell Membranes for Application to Plasma Gene Transfection.
Amel Zerrouki, Mohammed Yousfi, Ahmed Rhallabi, Hideki Motomura and Masafumi Jinno. Plasma Processes Polym. 2016, 13, 633-648
- Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells.
Jean-Pierre Landesman, Juan Jimenez, Christophe Levallois, Frederic Pommereau, Cesare Frigeri, Alfredo Torres, Yoan Leger, Alexandre Beck and Ahmed Rhallabi. Journal of Vacuum Science & Technology A 2016, 34, 041304
Année 2015
- Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour.
J P. Landesman, C. Levallois, J. Jimenez, F. Pommereau, Y. Leger, A. Beck, T. Delhaye, A. Torres, C. Frigeri and A. Rhallabi. Microelectron. Reliab. 2015, 55, 1750-1753
- Surface chemistry of InP ridge structures etched in Cl-2-based plasma analyzed with angular XPS.
Sophie Bouchoule, Romain Chanson, Arnaud Pageau, Edmond Cambril, Stephane Guilet, Ahmed Rhallabi and Christophe Cardinaud. J. Vac. Sci. Technol. A 2015, 33, 05E124
Année 2014
- X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl-2-based inductively coupled plasma.
Romain Chanson, Sophie Bouchoule, Christophe Cardinaud, Camille Petit-Etienne, Edmond Cambril, Ahmed Rhallabi, Stephane Guilet and Elisabeth Blanquet. J. Vac. Sci. Technol. B 2014, 32, 011219
- Modeling of inductively coupled plasma SF6/O-2/Ar plasma discharge, Effect of O-2 on the plasma kinetic properties.
Amand Pateau, Ahmed Rhallabi, Marie-Claude Fernandez, Mohamed Boufnichel and Fabrice Roqueta. J. Vac. Sci. Technol. A 2014, 32, 021303
- SF6 and C4F8 global kinetic models coupled to sheath models.
Yehya Haidar, Amand Pateau, Ahmed Rhallabi, Marie Claude Fernandez, Arezki Mokrani, Fadia Taher, Fabrice Roqueta and Mohamed Boufnichel. Plasma Sources Sci. Technol. 2014, 23, 065037
Année 2013
- Modeling of inductively coupled plasma Ar/Cl-2/N-2 plasma discharge: Effect of N-2 on the plasma properties.
Romain Chanson, Ahmed Rhallabi, Marie Claude Fernandez, Christophe Cardinaud and Jean Pierre Landesman. J. Vac. Sci. Technol. A 2013, 31, 011301
- Electrical Characteristics of TiTaO Thin Films Deposited on SiO2/Si Substrates by Magnetron Sputtering.
S. Salimy, F. Challali, A. Goullet, M -P. Besland, M. Carette, N. Gautier, A. Rhallabi, J P. Landesman, S. Toutain and D. Averty. ECS Solid State Lett. 2013, 2, Q13-Q15
- Modeling of InP Etching Under ICP Cl2/Ar/N2 Plasma Mixture: Effect of N2 on the Etch Anisotropy Evolution.
Romain Chanson, Ahmed Rhallabi, Marie Claude Fernandez and Christophe Cardinaud. Plasma Process. Polym. 2013, 10, 213-224
Année 2012
Année 2011
- Atomic scale study of InP etching by Cl-2-Ar ICP plasma discharge.
A. Rhallabi, R. Chanson, J -P. Landesman, C. Cardinaud and M -C. Fernandez. Eur. Phys. J.-Appl. Phys 2011, 53, 33606
- A unified analytical and scalable lumped model of RF CMOS spiral inductors based on electromagnetic effects and circuit analysis.
Siamak Salimy, Antoine Goullet, Ahmed Rhallabi, Fatiha Challali, Serge Toutain and Jean Claude Saubat. Solid-State Electron. 2011, 61, 38-45
- Modelling of fluorine based high density plasma for the etching of silica glasses.
Ludovic Lallement, Ahmed Rhallabi, Christophe Cardinaud and Marie Claude Peignon Fernandez. J. Vac. Sci. Technol. A 2011, 29, 051304
Année 2010
- Etching studies of silica glasses in SF6/Ar inductively coupled plasmas: Implications for microfluidic devices fabrication.
L. Lallement, C. Gosse, C. Cardinaud, M -C. Peignon-Fernandez and A. Rhallabi. J. Vac. Sci. Technol. A 2010, 28, 277-286
- Cathodoluminescence Study of InP Photonic Structures Fabricated by Dry Etching.
R. Chanson, A. Martin, M. Avella, J. Jimenez, F. Pommereau, J P. Landesman and A. Rhallabi. J. Electron. Mater. 2010, 39, 688-693
Année 2008
- Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition.
G. Marcos, A. Rhallabi and P. Ranson. Appl. Surf. Sci. 2008, 254, 3576-3584
- Process induced mechanical stress in InP ridge waveguides fabricated by inductively coupled plasma etching.
M. Avella, J. Jimenez, F. Pommereau, J P. Landesman and A. Rhallabi. Appl. Phys. Lett. 2008, 93, 131913
- Introduction of defects during the dry etching of InP photonic structures: a cathodo-luminescence study.
Manuel Avella, Juan Jimenez, Frederic Pommereau, Jean-Pieere Landesman and Ahmed Rhallabi. J. Mater. Sci.-Mater. Electron. 2008, 19, S171-S175
Année 2007
- Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by Cl-2/Ar+.
L. Elmonser, A. Rhallabi, M. Gaillard, J P. Landesman, Anne Talneau, F. Pommereau and N. Bouadma. J. Vac. Sci. Technol. A 2007, 25, 126-133
- Investigation of point defect generation in dry etched InP ridge waveguide structures.
M. Avella, J. Jimenez, F. Pommereau, J P. Landesman and A. Rhallabi. Appl. Phys. Lett. 2007, 90, 223510
Année 2006
Référence n° 2079 : A. Rhallabi, B. Liu, J P. Landesman and J L. Lecler. 2006, 9
Référence n° 2078 : B. Liu, J -P. Landesman, J -L. Leclercq, A. Rhallabi, M. Avella, M A. Gonzalez, J. Jimenez, S. Guilet, C. Cardinaud and F. Pommereau. 2006, 9
- InP surface properties under ICP plasma etching using mixtures of chlorides and hydrides.
B. Liu, J -P. Landesman, J -L. Leclercq, A. Rhallabi, C. Cardinaud, S. Guilet, F. Pommereau, M. Avella, M A. Gonzalez and J. Jimenez. Mater. Sci. Semicond. Process 2006, 9, 225-229
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