• Ultrafast spectroscopy of coherent phonons across the pressure driven insulator to metal phase transition in V2O3.
  Thomas Gauthier, Nicolas Godin, Gaël Privault, Roman Bertoni, Etienne Janod, Danylo Babich, Benoit Corraze, Julien Tranchant and Laurent Cario.
  Phys. Rev. Res. 2024, 6, 043037
• Propagation of insulator-to-metal transition driven by photoinduced strain waves in a {Mott} material.
  Tatsuya Amano, Danylo Babich, Ritwika Mandal, Julio Guzman-Brambila, Alix Volte, Elzbieta Trzop, Marina Servol, Ernest Pastor, Maryam Alashoor, Jörgen Larsson, Andrius Jurgilaitis, Van-Thai Pham, David Kroon, John Carl Ekström, Byungnam Ahn, Celine Mariette, Matteo Levantino, Mikhail Kozhaev, Julien Tranchant, Benoit Corraze, Laurent Cario, Mohammad Dolatabadi, Vinh Ta Phuoc, Rodolphe Sopracase, Mathieu Guillon, Hirotake Itoh, Yohei Kawakami, Yuto Nakamura, Hideo Kishida, Hervé Cailleau,
  Nat. Phys. 2024, 1-8

• Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (Cr1-xVx)2O3.
  Michael Rodriguez-Fano, Mohamad Haydoura, Julien Tranchant, Etienne Janod, Benoit Corraze, Pierre-Yves Jouan, Laurent Cario and Marie-Paule Besland.
  ACS Appl. Mater. Interfaces 2023, 15, 54611-54621
• Electron-enhanced high power impulse magnetron sputtering with a multilevel high power supply: Application to Ar/Cr plasma discharge.
  J. Zgheib, L. Berthelot, J. Tranchant, N. Ginot, M -P. Besland, A. Caillard, T. Minea, A. Rhallabi and P -Y. Jouan.
  Journal of Vacuum Science & Technology A 2023, 41, 063003
• Ultrafast photo-induced dynamics of V2O3 thin films under hydrostatic pressure.
  Gaël Privault, Guénolé Huitric, Marius Hervé, Elzbieta Trzop, Julien Tranchant, Benoit Corraze, Zohra Khaldi, Laurent Cario, Etienne Janod, Jean-Claude Ameline, Nicolas Godin and Roman Bertoni.
  Eur. Phys. J. Spec. Top. 2023, 232, 2195-2203

• Impact of the terahertz and optical pump penetration depths on generated strain waves temporal profiles in a V2O3 thin film.
  Guénolé Huitric, Michael Rodriguez-Fano, Lucas Gournay, Nicolas Godin, Marius Hervé, Gaël Privault, Julien Tranchant, Zohra Khaldi, Marco Cammarata, Eric Collet, Etienne Janod and Christophe Odin.
  Faraday Discuss. 2022, 237, 389-405
• Artificial Electro-Optical Neuron Integrating Hot Electrons in a Mott Insulator.
  Danylo Babich, Laurent Cario, Benoit Corraze, Maciej Lorenc, Julien Tranchant, Roman Bertoni, Marco Cammarata, Hervé Cailleau and Etienne Janod.
  Phys. Rev. Applied 2022, 17, 014040

• Probing and Mapping the Dynamics of Metal/Insulator Nanodomains Switching in V2O3 by Cryo-Spectromicroscopy Techniques.
  Ibrahim Koita, Xiaoyan Li, Luiz H G. Tizei, Jean-Denis Blazit, Nathalie Brun, Julien Tranchant, Benoit Corraze, Laurent Cario, Etienne Janod, Marcel Tencé, Odile Stephan and Laura Bocher.
  Microscopy and Microanalysis 2021, 27, 67-68
• Mapping metal/insulator nanodomains switching in V2O3 by variable-temperature electron spectromicroscopy investigations.
  Ibrahim Koita, Xiaoyan Li, Luiz H G. Tizei, Jean-Denis Blazit, Nathalie Brun, Etienne Janod, Julien Tranchant, Benoit Corraze, Laurent Cario, Marcel Tencé, Odile Stephan and Laura Bocher.
  Microscopy and Microanalysis 2021, 27, 1482-1485

• Control of stoichiometry and morphology in polycrystalline V(2)O(3)thin films using oxygen buffers.
  Jonathan A J. Rupp, Benoit Corraze, Marie-Paule Besland, Laurent Cario, Julien Tranchant, Dirk J. Wouters, Rainer Waser and Etienne Janod.
  J. Mater. Sci. 2020, 55, 14717-14727
• Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode.
  J A J. Rupp, E. Janod, M -P. Besland, B. Corraze, A. Kindsmüller, M. Querre, J. Tranchant, L. Cario, R. Dittmann, R. Waser and D J. Wouters.
  Thin Solid Films 2020, 705, 138063

• Relaxation of a Spiking Mott Artificial Neuron.
  Federico Tesler, Coline Adda, Julien Tranchant, Benoit Corraze, Etienne Janod, Laurent Cario, Pablo Stoliar and Marcelo Rozenberg.
  Phys. Rev. Appl. 2018, 10, 054001
• Mott insulators: A large class of materials for Leaky Integrate and Fire (LIF) artificial neuron.
  Coline Adda, Benoit Corraze, Pablo Stoliar, Pascale Diener, Julien Tranchant, Agathe Filatre-Furcate, Marc Fourmigue, Dominique Lorcy, Marie-Paule Besland, Etienne Janod and Laurent Cario.
  J. Appl. Phys. 2018, 124, 152124
• Non-volatile resistive switching in the Mott insulator (V1-xCrx)(2)O-3.
  M. Querre, J. Tranchant, B. Corraze, S. Cordier, V. Bouquet, S. Deputier, M. Guilloux-Viry, M -P. Besland, E. Janod and L. Cario.
  Physica B-Condensed Matter 2018, 536, 327-330

• Control of Resistive Switching in Mott Memories Based on TiN/AM(4)Q(8)/TiN MIM Devices
  .
  J. Tranchant, J. Sandrini, E. Janod, D. Sacchetto, B. Corraze, M -P. Besland, J. Ghanbaja, G. De Micheli, P -E. Gaillardon, L. Cario, S. Shingubara, Z. Karim, B. MagyariKope, H. Shima, H. Kubota, J G. Park, K. Kobayashi, L. Goux, G. Bersuker and Y. Saito.
  Nonvolatile {Memories} 5 2017, 27, 3-12
• An artificial neuron founded on resistive switching of Mott insulators.
  Coline Adda, Julien Tranchant, Pablo Stoliar, Benoit Corraze, Etienne Janod, Ralph Gay, Roger Llopis, Marie-Paule Besland, Luis E. Hueso and Laurent Cario.
  2017 {Ieee} 9th {International} {Memory} {Workshop} (imw) 2017, 27, 149-152
• A Leaky-Integrate-and-Fire Neuron Analog Realized with a Mott Insulator.
  Pablo Stoliar, Julien Tranchant, Benoit Corraze, Etienne Janod, Marie-Paule Besland, Federico Tesler, Marcelo Rozenberg and Laurent Cario.
  Adv. Funct. Mater. 2017, 27, 1604740

• Metal-insulator transitions in (V1-xCrx)(2)O-3 thin films deposited by reactive direct current magnetron co-sputtering.
  Madec Querre, Etienne Janod, Laurent Cario, Julien Tranchant, Benoit Corraze, Valérie Bouquet, Stephanie Deputier, Stephane Cordier, Maryline Guilloux-Viry and Marie-Paule Besland.
  Thin Solid Films 2016, 617, 56-62

• From resistive switching mechanisms in AM(4)Q(8) Mott insulators to Mott memories.
  J. Tranchant, E. Janod, B. Corraze, M -P. Besland and L. Cario.
  2015 {Ieee} 7th {International} {Memory} {Workshop} (imw) 2015, 212, 97-100
• Control of resistive switching in AM(4)Q(8) narrow gap Mott insulators: A first step towards neuromorphic applications.
  Julien Tranchant, Etienne Janod, Benoit Corraze, Pablo Stoliar, Marcelo Rozenberg, Marie-Paule Besland and Laurent Cario.
  Phys. Status Solidi A-Appl. Mat. 2015, 212, 239-244
• Resistive Switching Induced by Electric Pulses in a Single-Component Molecular Mott Insulator.
  Pablo Stoliar, Pascale Diener, Julien Tranchant, Benoit Corraze, Benjamin Briere, Vinh Ta-Phuoc, Nathalie Bellec, Marc Fourmigue, Dominique Lorcy, Etienne Janod and Laurent Cario.
  J. Phys. Chem. C 2015, 119, 2983-2988
• Resistive Switching in Mott Insulators and Correlated Systems.
  Etienne Janod, Julien Tranchant, Benoit Corraze, Madec Querre, Pablo Stoliar, Marcelo Rozenberg, Tristan Cren, Dimitri Roditchev, Vinh Ta Phuoc, Marie-Paule Besland and Laurent Cario.
  Adv. Funct. Mater. 2015, 25, 6287-6305

• Electric Pulse Induced Resistive Switching in the Narrow Gap Mott Insulator GaMo4S8.
  Valérie Bouquet, Laurent Cario, Stephane Cordier, Maryline Guilloux-Viry, Madec Querre, Benoit Corraze, Etienne Janod, Marie Paule Besland, Julien Tranchant and Michel Potel.
  Inorganic and Environmental Materials 2014, 200, 135-140
• Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications.
  J. Tranchant, A. Pellaroque, E. Janod, B. Angleraud, B. Corraze, L. Cario and M -P. Besland.
  J. Phys. D-Appl. Phys. 2014, 47, 065309
• Nonthermal and purely electronic resistive switching in a Mott memory.
  P. Stoliar, M. Rozenberg, E. Janod, B. Corraze, J. Tranchant and L. Cario.
  Phys. Rev. B 2014, 90, 045146

• Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers.
  J. Tranchant, E. Janod, L. Cario, B. Corraze, E. Souchier, J -L. Leclercq, P. Cremillieu, P. Moreau and M -P. Besland.
  Thin Solid Films 2013, 533, 61-65
• Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application.
  E. Souchier, M -P. Besland, J. Tranchant, B. Corraze, P. Moreau, R. Retoux, C. Estournes, P. Mazoyer, L. Cario and E. Janod.
  Thin Solid Films 2013, 533, 54-60
• Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators.
  Pablo Stoliar, Laurent Cario, Etiene Janod, Benoit Corraze, Catherine Guillot-Deudon, Sabrina Salmon-Bourmand, Vincent Guiot, Julien Tranchant and Marcelo Rozenberg.
  Adv. Mater. 2013, 25, 3222-3226
• Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM(4)Q(8).
  B. Corraze, E. Janod, L. Cario, P. Moreau, L. Lajaunie, P. Stoliar, V. Guiot, V. Dubost, J. Tranchant, S. Salmon, M -P. Besland, Ta V. Phuoc, T. Cren, D. Roditchev, N. Stephant, D. Troadec and M. Rozenberg.
  Eur. Phys. J.-Spec. Top. 2013, 222, 1047-1056

• Small scale mechanical properties of polycrystalline materials: in situ diffraction studies.
  B. Girault, V. Vidal, L. Thilly, P -O. Renault, P. Goudeau, E. LeBourhis, P. Villain-Valat, G. Geandier, J. Tranchant, J -P. Landesman, P -Y. Tessier, B. Angleraud, M -P. Besland, A. Djouadi and F. Lecouturier.
  Int. J. Nanotechnol. 2008, 5, 609-630
• Relation between residual stresses and microstructure in Mo(Cr) thin films elaborated by ionized magnetron sputtering.
  J. Tranchant, P Y. Tessier, J P. Landesman, M A. Djouadi, B. Angleraud, P O. Renault, B. Girault and P. Goudeau.
  Surf. Coat. Technol. 2008, 202, 2247-2251

• Carbon nanochannels elaborated by buckle delamination control on patterned substrates.
  J. Tranchant, B. Angleraud, X L. Han, J P. Landesman and P Y. Tessier.
  Appl. Phys. Lett. 2007, 91, 013103

• Residual stress control in MoCr thin films deposited by ionized magnetron sputtering.
  J. Tranchant, B. Angleraud, P Y. Tessier, M P. Besland, J P. Landesman and M A. Djouadi.
  Surf. Coat. Technol. 2006, 200, 6549-6553