• Ultrafast photo-induced dynamics of V2O3 thin films under hydrostatic pressure.
  Gaël Privault, Guénolé Huitric, Marius Hervé, Elzbieta Trzop, Julien Tranchant, Benoit Corraze, Zohra Khaldi, Laurent Cario, Etienne Janod, Jean-Claude Ameline, Nicolas Godin and Roman Bertoni.
  Eur. Phys. J. Spec. Top. 2022
• Impact of the terahertz and optical pump penetration depths on generated strain waves temporal profiles in a V2O3 thin film.
  Guénolé Huitric, Michael Rodriguez-Fano, Lucas Gournay, Nicolas Godin, Marius Hervé, Gaël Privault, Julien Tranchant, Zohra Khaldi, Marco Cammarata, Eric Collet, Etienne Janod and Christophe Odin.
  Faraday Discuss. 2022
• Artificial Electro-Optical Neuron Integrating Hot Electrons in a Mott Insulator.
  Danylo Babich, Laurent Cario, Benoit Corraze, Maciej Lorenc, Julien Tranchant, Roman Bertoni, Marco Cammarata, Hervé Cailleau and Etienne Janod.
  Phys. Rev. Applied 2022, 17, 014040

• Mapping metal/insulator nanodomains switching in V2O3 by variable-temperature electron spectromicroscopy investigations.
  Ibrahim Koita, Xiaoyan Li, Luiz H G. Tizei, Jean-Denis Blazit, Nathalie Brun, Etienne Janod, Julien Tranchant, Benoit Corraze, Laurent Cario, Marcel Tencé, Odile Stephan and Laura Bocher.
  Microscopy and Microanalysis 2021, 27, 1482-1485

• Control of stoichiometry and morphology in polycrystalline V(2)O(3)thin films using oxygen buffers.
  Jonathan A J. Rupp, Benoit Corraze, Marie-Paule Besland, Laurent Cario, Julien Tranchant, Dirk J. Wouters, Rainer Waser and Etienne Janod.
  J. Mater. Sci. 2020, 55, 14717-14727
• Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode.
  J A J. Rupp, E. Janod, M -P. Besland, B. Corraze, A. Kindsmüller, M. Querre, J. Tranchant, L. Cario, R. Dittmann, R. Waser and D J. Wouters.
  Thin Solid Films 2020, 705, 138063

• Relaxation of a Spiking Mott Artificial Neuron.
  Federico Tesler, Coline Adda, Julien Tranchant, Benoit Corraze, Etienne Janod, Laurent Cario, Pablo Stoliar and Marcelo Rozenberg.
  Phys. Rev. Appl. 2018, 10, 054001
• Mott insulators: A large class of materials for Leaky Integrate and Fire (LIF) artificial neuron.
  Coline Adda, Benoit Corraze, Pablo Stoliar, Pascale Diener, Julien Tranchant, Agathe Filatre-Furcate, Marc Fourmigue, Dominique Lorcy, Marie-Paule Besland, Etienne Janod and Laurent Cario.
  J. Appl. Phys. 2018, 124, 152124
• Non-volatile resistive switching in the Mott insulator (V1-xCrx)(2)O-3.
  M. Querre, J. Tranchant, B. Corraze, S. Cordier, V. Bouquet, S. Deputier, M. Guilloux-Viry, M -P. Besland, E. Janod and L. Cario.
  Physica B-Condensed Matter 2018, 536, 327-330

• Control of Resistive Switching in Mott Memories Based on TiN/AM(4)Q(8)/TiN MIM Devices
  .
  J. Tranchant, J. Sandrini, E. Janod, D. Sacchetto, B. Corraze, M -P. Besland, J. Ghanbaja, G. De Micheli, P -E. Gaillardon, L. Cario, S. Shingubara, Z. Karim, B. MagyariKope, H. Shima, H. Kubota, J G. Park, K. Kobayashi, L. Goux, G. Bersuker and Y. Saito.
  Nonvolatile {Memories} 5 2017, 27, 3-12
• An artificial neuron founded on resistive switching of Mott insulators.
  Coline Adda, Julien Tranchant, Pablo Stoliar, Benoit Corraze, Etienne Janod, Ralph Gay, Roger Llopis, Marie-Paule Besland, Luis E. Hueso and Laurent Cario.
  2017 {Ieee} 9th {International} {Memory} {Workshop} (imw) 2017, 27, 149-152
• A Leaky-Integrate-and-Fire Neuron Analog Realized with a Mott Insulator.
  Pablo Stoliar, Julien Tranchant, Benoit Corraze, Etienne Janod, Marie-Paule Besland, Federico Tesler, Marcelo Rozenberg and Laurent Cario.
  Adv. Funct. Mater. 2017, 27, 1604740

• Metal-insulator transitions in (V1-xCrx)(2)O-3 thin films deposited by reactive direct current magnetron co-sputtering.
  Madec Querre, Etienne Janod, Laurent Cario, Julien Tranchant, Benoit Corraze, Valérie Bouquet, Stephanie Deputier, Stephane Cordier, Maryline Guilloux-Viry and Marie-Paule Besland.
  Thin Solid Films 2016, 617, 56-62

• From resistive switching mechanisms in AM(4)Q(8) Mott insulators to Mott memories.
  J. Tranchant, E. Janod, B. Corraze, M -P. Besland and L. Cario.
  2015 {Ieee} 7th {International} {Memory} {Workshop} (imw) 2015, 212, 97-100
• Control of resistive switching in AM(4)Q(8) narrow gap Mott insulators: A first step towards neuromorphic applications.
  Julien Tranchant, Etienne Janod, Benoit Corraze, Pablo Stoliar, Marcelo Rozenberg, Marie-Paule Besland and Laurent Cario.
  Phys. Status Solidi A-Appl. Mat. 2015, 212, 239-244
• Resistive Switching Induced by Electric Pulses in a Single-Component Molecular Mott Insulator.
  Pablo Stoliar, Pascale Diener, Julien Tranchant, Benoit Corraze, Benjamin Briere, Vinh Ta-Phuoc, Nathalie Bellec, Marc Fourmigue, Dominique Lorcy, Etienne Janod and Laurent Cario.
  J. Phys. Chem. C 2015, 119, 2983-2988
• Resistive Switching in Mott Insulators and Correlated Systems.
  Etienne Janod, Julien Tranchant, Benoit Corraze, Madec Querre, Pablo Stoliar, Marcelo Rozenberg, Tristan Cren, Dimitri Roditchev, Vinh Ta Phuoc, Marie-Paule Besland and Laurent Cario.
  Adv. Funct. Mater. 2015, 25, 6287-6305

• Electric Pulse Induced Resistive Switching in the Narrow Gap Mott Insulator GaMo4S8.
  Valérie Bouquet, Laurent Cario, Stephane Cordier, Maryline Guilloux-Viry, Madec Querre, Benoit Corraze, Etienne Janod, Marie Paule Besland, Julien Tranchant and Michel Potel.
  Inorganic and Environmental Materials 2014, 200, 135-140
• Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications.
  J. Tranchant, A. Pellaroque, E. Janod, B. Angleraud, B. Corraze, L. Cario and M -P. Besland.
  J. Phys. D-Appl. Phys. 2014, 47, 065309
• Nonthermal and purely electronic resistive switching in a Mott memory.
  P. Stoliar, M. Rozenberg, E. Janod, B. Corraze, J. Tranchant and L. Cario.
  Phys. Rev. B 2014, 90, 045146

• Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers.
  J. Tranchant, E. Janod, L. Cario, B. Corraze, E. Souchier, J -L. Leclercq, P. Cremillieu, P. Moreau and M -P. Besland.
  Thin Solid Films 2013, 533, 61-65
• Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application.
  E. Souchier, M -P. Besland, J. Tranchant, B. Corraze, P. Moreau, R. Retoux, C. Estournes, P. Mazoyer, L. Cario and E. Janod.
  Thin Solid Films 2013, 533, 54-60
• Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators.
  Pablo Stoliar, Laurent Cario, Etiene Janod, Benoit Corraze, Catherine Guillot-Deudon, Sabrina Salmon-Bourmand, Vincent Guiot, Julien Tranchant and Marcelo Rozenberg.
  Adv. Mater. 2013, 25, 3222-3226
• Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM(4)Q(8).
  B. Corraze, E. Janod, L. Cario, P. Moreau, L. Lajaunie, P. Stoliar, V. Guiot, V. Dubost, J. Tranchant, S. Salmon, M -P. Besland, Ta V. Phuoc, T. Cren, D. Roditchev, N. Stephant, D. Troadec and M. Rozenberg.
  Eur. Phys. J.-Spec. Top. 2013, 222, 1047-1056

• Small scale mechanical properties of polycrystalline materials: in situ diffraction studies.
  B. Girault, V. Vidal, L. Thilly, P -O. Renault, P. Goudeau, E. LeBourhis, P. Villain-Valat, G. Geandier, J. Tranchant, J -P. Landesman, P -Y. Tessier, B. Angleraud, M -P. Besland, A. Djouadi and F. Lecouturier.
  Int. J. Nanotechnol. 2008, 5, 609-630
• Relation between residual stresses and microstructure in Mo(Cr) thin films elaborated by ionized magnetron sputtering.
  J. Tranchant, P Y. Tessier, J P. Landesman, M A. Djouadi, B. Angleraud, P O. Renault, B. Girault and P. Goudeau.
  Surf. Coat. Technol. 2008, 202, 2247-2251

• Carbon nanochannels elaborated by buckle delamination control on patterned substrates.
  J. Tranchant, B. Angleraud, X L. Han, J P. Landesman and P Y. Tessier.
  Appl. Phys. Lett. 2007, 91, 013103

• Residual stress control in MoCr thin films deposited by ionized magnetron sputtering.
  J. Tranchant, B. Angleraud, P Y. Tessier, M P. Besland, J P. Landesman and M A. Djouadi.
  Surf. Coat. Technol. 2006, 200, 6549-6553