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Articles Tagged ‘Cardinaud’

Cryoetching

Christophe Cardinaud, Aurélie Girard, Cédric Mannequin [2022, ->], Ahmed Rhallabi Post-doctoral researcher :Felipe Cemin [2022-2023],Ahmad Mortada [2022-2022],  PhD Student Jack Nos [2021-2024]

PROCEDE DE GRAVURE PAR PLASMA Gravure temprature cryognique image

In addition to the usual field of application in deep silicon etching, cryogenic processes appear promising today for the etching of various materials (semiconductors, their oxides and nitrides, low-permittivity materials, etc.) at nanometric pattern sizes and with the need to control the etched depth to the atomic layer (ALE - atomic layer etching).
One of the interests of cryo-ALE is in the fact that the species participating in the etching are, in the first step, physisorbed on the surface of the cold substrate and then react chemically with it during an argon plasma initiated in the second step. These steps are then repeated until the desired etching depth is reached.
Achieving these application objectives requires progress in the understanding of the physical and chemical mechanisms involved in the process.
To achieve these objectives, this study is conducted for silicon compounds (Si3N4 and SiO2) for different fluorinated gases on the Optimist platform connected by ultra-vacuum transfer to a XPS between -180°C and +100°C.


Keywords        Cyclic plasma etching, cryo-ALE, physisorption, selectivity.
Expertises       Fluorine-based plasmas SF6, CF4, C4F8, In situ surface characterisation: XPS
Collaborations      GREMI Orléans, TEL Tokyo et Albany, LTM Grenoble

Etching and surface caracterisation of Ge-Sb-Se chalcogenide materials

Christophe Cardinaud, Aurélie Girard

PhD : Thibaut Meyer (2019)

PROCEDE DE GRAVURE PAR PLASMA Gravure et caractrisation de surface de matriaux chalcognures imageThe chalcogenide materials (S, Se, Te) formed in association with the elements of columns 13 (Ga, In) 14 (Si, Ge) or 15 (As, Sb) have particular or remarkable properties: excellent transmission in the mid-infrared and optical non-linearity for amorphous phases, low resistivity for crystalline phases, phase transition under electrical or thermal stress, which open the way to applications in integrated optics or for non-volatile PCRAM memories.
Device manufacturing requires structuring the material at the micrometer or nanometer scale. This step is decisive since the functionality and performance of the component depends on the chemical and physical surface quality of the structure produced.
Our work is focused on the GeSbSe family; it concerns the characterisation of solid and thin film materials made from them as well as the study of etching processes in fluorine-based plasmas (SF6, SF6-Ar, SF6-O2) or in CH4-H2-Ar mixtures with the aim of developing the knowledge on the etching mechanisms, assessing the damage induced and the viability of the processes. To know more, refer to Meyer et al 2020, or 2021

Keywords :            HgCdTe, Plasma etching, Infra-red photodetectors, CH4-H2 plasmas
Expertises :           Fluorine-based and CH4-H2 plasmas, In situ surface characterisation: XPS, ellipsometry, Plasma diagnostics: optical emission spectrometry, mass spectrometry, electrostatic probes.
Collaborations :    ISCR-Rennes, KPF-Pardubice

 

 

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