CARDINAUD Christophe
CNRS Research Director
Function:
CNRS researcher
Expertises :
- Low-pressure cold plasma etching of materials.
- Plasma diagnostics (optical emission spectrometry, mass spectrometry, electrostatic probes).
- Surface characterization (XPS, ellipsometry).
Main research themes:
- Low-pressure rf plasma processes and study of plasma-surface interaction mechanisms for materials etching and treatment.
- Etching V2O3
- Plasma-surface interaction mechanisms at low temperatures
Current research projects :
ANR project 20-CE24-0014-02 PSICryo “Understanding plasma-surface interactions in cryogenic etching for advanced patterning applications”, involving LTM-Grenoble (leader), GREMI-Orléans and IMN-Nantes. For IMN, the aim is to study the surface mechanisms (chemisorption vs. physisorption) involved in cryogenic etching processes, particularly with a view to controlled atomic layer etching (ALE).
https://anr.fr/Projet-ANR-20-CE24-0014
Biography:
After university studies and a thesis on the structural characterization of SiGe:H and Si:H,Cl amorphous semiconductors by X-ray and electron spectroscopy, I joined the CNRS to work on the characterization of cold plasma-treated surfaces and thin-film materials (1985-1988). My interests then extended to the study of plasma processes for etching semiconductor, dielectric or metallic materials (1988-present).
I was interested in and trained in the physics of radio-frequency excited discharges in gases at low pressure (~1 Pa) and their diagnostics. This led me to develop expertise in the etching of materials for microelectronics: Si, SiO2, low-κ organosilicides, silica glasses and W in fluorinated plasma (SF6, CHF3, C2F6), and in the etching of materials for photonics: InP and CdHgTe in CH4-H2 plasma and derivatives, chalcogenide glasses in fluorinated and CH4-H2 plasmas. This has also led me to develop expertise in the physical and chemical characterization of plasmas using mass spectrometry, optical emission spectrometry and electrostatic probes, as well as in the characterization of surfaces and interfaces using photoelectron spectrometry, ellipsometry and near-field microscopy.
My current research concerns the etching of vanadium oxide V2O3 and the fundamental mechanisms of etching and plasma and gas interaction with the surface at cryogenic temperature.
Publications :
122
Major illustrative publications:
Review articles
Ch. Cardinaud, M-C. Peignon, P.Y. Tessier “Plasma etching: principles, mechanisms, application to micro- and nanotechnologies” Appl. Surf. Sci. 164, 72-83 2000.
http://dx.doi.org/10.1016/S0169-4332(00)00328-7
C. Cardinaud “Fluorine-based plasmas: Main features and application in micro-and nanotechnology and in surface treatment” Comptes Rendus Chimie de l’Académie des Sciences 21, 723-739 2018.
https://doi.org/10.1016/j.crci.2018.01.009
Articles on plasma etching mechanisms, plasma diagnostics, plasma-surface interaction
Ch. Cardinaud, A. Rhounna, G. Turban, B. Grolleau “Contamination of silicon surfaces exposed to CHF3 plasmas: An XPS study of the film-surface interface” J. Electrochem. Soc. 135, 1472-1477, 1988. http://dx.doi.org/10.1149/1.2096034
Ch. Cardinaud, G. Turban “Mechanistic studies of the initial stages of etching of Si and SiO2 in a CHF3 plasma” Appl. Surf. Sci. 45, 109-120, 1990.
http://dx.doi.org/10.1016/0169-4332(90)90061-4
M-C. Peignon, Ch. Cardinaud, G. Turban “A kinetic study of reactive ion etching of tungsten in SF6 – O2 RF plasmas” J. Electrochem. Soc. 140, 505-512, 1993.
http://dx.doi.org/10.1149/1.2221077
Y. Feurprier, Ch. Cardinaud, G. Turban “Influence of the gas mixture on the reactive ion etching of InP in CH4 – H2 plasmas” J. Vacuum Sci. & Technol. B 15, 1733-1740 1997.
http://dx.doi.org/10.1116/1.589363
F. Gaboriau, G. Cartry, M-C. Peignon, Ch. Cardinaud “Selective and deep plasma etching of SiO2: comparison between different fluorocarbon gases (CF4, C2F6, CHF3) mixed with CH4 or H2 and influence of residence time” J. Vacuum Sci. & Technol. B 20, 1514-1521 2002.
http://dx.doi.org/10.1116/1.1495502
S. Bouchoule, R. Chanson, A. Pageau, E. Cambril, S. Guilet, A. Rhallabi, C. Cardinaud “Surface chemistry of InP ridge structures etched in Cl2-based plasma analysed with angular XPS” J. Vacuum Sci. & Technol. A 33, 05E124 2015.
http://dx.doi.org/10.1116/1.4927541
J. Piet, W. Faider, A. Girard, F. Boulard and C. Cardinaud “Investigation of organic precursors and plasma mixtures allowing control of carbon passivation when etching HgCdTe in hydrocarbon-based inductively coupled plasmas” J. Vacuum Sci. & Technol. A 38, 053005 2020. https://doi.org/10.1116/6.0000397
T. Meyer, A. Girard, G. Le Dain, A. Rhallabi, E. Baudet, M. Baillieul, V. Nazabal, P. Němec and C. Cardinaud “Mass spectrometry and in situ X-ray Photoelectron Spectroscopy investigations of organometallic species induced by the etching of germanium, antimony and selenium in a methane-based plasma” Plasma Sources Sci. & Technol. 32 (2023) 085003.
https://doi.org/10.1088/1361-6595/aceaa5
Articles related to expertise in XPS analysis – external collaborations
K. Tsougeni, N. Vourdas, A. Tserepi, E. Gogolides, C. Cardinaud “Mechanisms of Oxygen Plasma Nanotexturing of Organic Polymer Surfaces: From Stable Super Hydrophilic to Super Hydrophobic Surfaces” Langmuir 25, 11748-11759 2009.
http://dx.doi.org/10.1021/la901072z
E. Baudet, C. Cardinaud, A. Girard, E. Rinnert, K. Michel, B. Bureau, V. Nazabal “Structural analysis of RF sputtered Ge-Sb-Se thin films by Raman and X-ray photoelectron spectroscopies” J. Non-Cryst. Solids 444, 64-72 2016.
http://dx.doi.org/10.1016/j.jnoncrysol.2016.04.017
Link to publi HAL: https://hal.science/search/index?q=cardinaud+christophe
Link to orcid: https://orcid.org/0000-0002-9753-8848
Other links :
