TRANCHANT Julien

Categories: TEAM PMN

Function:

CNRS Research Engineer, HDR

Qualifications:

Doctorate in Materials Science, Engineer from Ecole Centrale de Nantes

Expertises:

Main research theme:

Study of the insulator-metal transition in thin-film Mott insulators for microelectronics applications

Biography:

Current research projects: Mott-IA Regional Academic Research Demonstrator Project, ANR FASTRAIN, IPCEI ME-CT Mott-IMC
Activities in the research community (committee member, network…) : Coordinator of IMN’s PLASSMAT platform
Award: SFP Grand Prix Felix Robin 2023

Publications and patents :

Propagating insulator-to-metal transition in the wake of photoinduced strain waves in a Mott material, Nature Physics 2024, https://doi.org/10.1038/s41567-024-02628-4
Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (Cr1-xVx)2O3, ACS Appl. Mater. Interfaces 2023, https://doi.org/10.1021/acsami.3c09387
A Leaky-Integrate-and-Fire Neuron Analog Realized with a Mott Insulator. Adv. Funct. Mater. 2017.https://doi-org.inc.bib.cnrs.fr/10.1002/adfm.201604740
Patent “Use of Mott insulators in neuromorphic networks” 2014
Resistive Switching in Mott Insulators and Correlated Systems. Adv. Funct. Mater. 2015, https://doi-org.inc.bib.cnrs.fr/10.1002/adfm.201500823
Deposition of GaV4S8 thin films by H2S/Ar reactive sputtering for ReRAM applications, J Phys D Appl. Phys. 2014, DOI 10.1088/0022-3727/47/6/065309

Link to orcid: https://orcid.org/0000-0003-4508-954X

Link to scholar.google.fr: https://scholar.google.com/citations?user=vMqkta8AAAAJ&hl=fr