News

Rim Ettouri, a faculty member and researcher at thePCM team, has just received funding fromthe ANR for her research project BOREAL: Optimization of the Bosch reactive plasma etching process using artificial intelligence for cryogenic applications.

The BOREAL project aims to better understand and control deep etching of silicon using plasma at cryogenic temperatures (around -100°C).

The three-dimensional fabrication of microsystems, sensors, and electronic components requires, in particular, the creation of deep and very fine structures in silicon. The etching processes currently used to manufacture them remain difficult to fine-tune. Even minor variations in conditions can slow down the etching process or even cause defects such as irregular walls.

Operating at cryogenic temperatures can result in smoother and more precisely controlled etching profiles. However, the mechanisms of interaction between the plasma and the silicon surface become particularly important under these conditions. BOREAL will combine experiments, physical simulations, and artificial intelligence methods to better understand these phenomena and predict their effects.

The ultimate goal of the project is to develop a digital twin demonstrator—in other words, a virtual representation of the process. This demonstrator will be able to link the machine’s operating parameters to the expected results. The engraving speed, the depth achieved, and the quality of the walls can all be examined.

This tool will help researchers and engineers identify the most suitable processing conditions more quickly, while reducing the number of time-consuming and costly experimental trials.

At the IMN, Rim Ettouri will work alongside Ahmed Rhallabi and Aurélie Girard, faculty members and researchers at the University of Nantes who are part of the PCM team.

Learn more about the project